The Ultimate Guide to Body Composition Scales and Bluetooth Health Monitors
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Low price, high purity indium(II) selenide powder and crystals

Suitable for use a semiconductor, photoconductor, and in non-linear optics


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Indium(II) selenide (InSe), CAS number 1312-42-1, belongs to the IIIA−VIA family group of 2D layered semiconductors. Each of its layers has a honeycomb lattice made of indium and selenium atoms.

High Purity

High purity ≥99.999% indium(II) selenide Crystal

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Low price Indium(II) Selenide (InSe)

Powder & Crystal

Available in Powder & Crystal forms

Like - but with a much more stable nature under ambient conditions, ultra-thin indium selenide (InSe) offers a useful middle ground between silicon and graphene. Weak van der Waals forces between layers of InSe allow easy mechanical and liquid exfoliation, enabling naturally thin films scaling to true nanometer dimensions. With electron mobility up to 2,000 cm2 V-1 s-1, which is significantly higher than that of silicon and and even higher than few-layer dichalcogenides, and a direct band gap of ~1.3 eV, InSe is a semiconductor comparable to silicon with ultra-fast electron response.

We supply high purity indium(II) selenide powder and crystals. .

Indium(II) Selenide Powder

Can be used in electronic and optical devices and in the preparation of InSe nanosheets or nanoparticles by liquid chemical exfoliation or chemical vapour deposition

Available in quantities of 500 mg or 1 g

≥99.995% purity

From [[price gbp="220"]]

Indium(II) Selenide Crystals by Size

Can be used as a semiconductor, in non-linear optics, and to produce 2D monolayer and few-layer InSe by mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) available*

≥99.999% purity

From [[price gbp="520"]]

*Typical representative size, areas/dimensions may vary.

Technical Data

CAS Number1312-42-1
Chemical FormulaInSe
Molecular Weight193.78 g/mol
Bandgap1.3 - 2.0 eV
PreparationSynthetic, by chemical vapour transport (CVT)
StructureRhombohedral
Electronic Properties2D semiconductor
Melting Point600 °C (lit.)
ColourDark brown
SynonymsIndium monoselenide
Classification / FamilyTransition metal dichalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

FormPurity
Powder≥99.995%
Crystal≥99.999%

Pricing Table

Product CodeFormSize/Weight*Price
M2135C1Powder500 mg[[price gbp="220"]]
M2135C1Powder1 g[[price gbp="350"]]
M2135A10CrystalSmall (≥10 mm2)[[price gbp="520"]] ea.
M2135A25CrystalMedium (≥25 mm2)[[price gbp="850"]] ea.

*typical representative size, areas/dimensions may vary.

MSDS Documents


Structure of Indium(II) Selenide


Single layer of indium(II) selenide (InSe) consists of four mono-atomic sheets of hexagonally arranged atoms tetrahedrally linked in the sequence of Se–In–In–Se via covalent bonds. Each of the two indium atoms is bound to three neighbouring selenides. At room temperature under ambient conditions, InSe crystallises in a rhombohedral layered phase, known as γ-InSe with a space group of R3m.

Each of its layers has a honeycomb lattice made of indium and selenium atoms. The layers are bound by relatively weak van der Waals forces which allow mechanical or wet exfoliation to obtain atomically thin films.

The crystal structure of hexagonal Indium(II) selenide (InSe)

Literature and Reviews


Indium(II) Selenide Powder in Literature

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals,G. W. Mudd et al., Sci. Rep., 6:39619 (2016); DOI: 10.1038/srep39619.
  • High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response, S. Tamalampudi et al., Nano Lett. 2014, 14, 2800−2806 (2014); doi: 10.1021/nl500817g.
  • Structural modification and band-gap crossover in indium selenide nanosheets, M. Airo et al., RSC Adv., 6, 40777 (2016); DOI: 10.1039/c6ra00262e.

Indium(II) Selenide Crystals in Literature

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals, G. W. Mudd et al., Sci. Rep., 6:39619 (2016); DOI: 10.1038/srep39619.
  • High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response, S. Tamalampudi et al., Nano Lett. 2014, 14, 2800−2806 (2014); doi: 10.1021/nl500817g.
  • Structural modification and band-gap crossover in indium selenide nanosheets, M. Airo et al., RSC Adv., 6, 40777 (2016); DOI: 10.1039/c6ra00262e.

We stock a wide range of 2D materials available to purchase online. Please if you cannot find what you are looking for.

Resources and Support


Viscoelastic Transfer of 2D Material Using PDMS

Viscoelastic transfer using polydimethylsiloxane (PDMS) stamps is one of the methods used for the deterministic placement of 2D materials and the fabrication of van der Waals heterostructures. It relies on the viscoelasticity of PDMS, which behaves as an elastic solid on short time scales, but as a viscous fluid on long time scales.

Indium(II) Selenide (InSe) Powder and Crystal

  • IndiumIISelenidePowder
  • IndiumIISelenideCrystal
  • 500mg
  • 1g
  • Small10mm2
  • Medium25mm2

$ 66.35

$ 86.26

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